Перегляд за автором "Grin, L.A."

Результати 1-3 з 3

Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere

Dan`ko, A.Ya.; Nizhankovsky, S.V.; Kanischev, V.N.; Sidelnikova, N.S.; Adonkin, G.T.; Puzikov, V.M.; Grin, L.A. (Functional Materials, 2006)

The gas environment process formation in the furnace for sapphire growth by horizontal directional crystalliztion equipped by a graphite heating assembly has been studied during the evacuation and the inert gas (Ar, He) ...
Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals

Dubovik, M.F.; Tolmachev, A.V.; Grinyov, B.V.; Grin, L.A.; Dolzhenkova, E.F.; Dobrotvorskaya, M.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)

Thermostimulated luminescence (TSL) of Li₂B₄O₇ and Li₂B₄O₇:Eu single crystals in the temperature range 290-650K has been studied. Lithium tetraborate (LTB) doped with europium has been found to favour a further increase ...
Optimization of temperature conditions for the growth of large-size sapphire crystals by the method of horizontally directed crystallization

Grin, L.A.; Budnikov, A.T.; Sidelnikova, N.S.; Adonkin, G.T.; Baranov, V.V. (Functional Materials, 2013)

The coefficient of dislocation gliding over the planes of easy glide depending on the shape of the crystallization front, is determined. The regions of non-uniform distribution of thermal field in the crystal are established. ...

Результати 1-3 з 3

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